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Model FQA13N50CF
Description QFET® N Channel MOSFET, 11A to 30A, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging TO-3-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
7.29  yuan 7.29yuan
10+:
$ 8.7504
100+:
$ 8.3129
500+:
$ 8.0212
1000+:
$ 8.0066
2000+:
$ 7.9483
5000+:
$ 7.8754
7500+:
$ 7.8170
10000+:
$ 7.7879
Quantity
10+
100+
500+
1000+
2000+
Price
$8.7504
$8.3129
$8.0212
$8.0066
$7.9483
Price $ 8.7504 $ 8.3129 $ 8.0212 $ 8.0066 $ 7.9483
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2376) Minimum order quantity(10)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 480 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 218 W

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/leakage source breakdown voltage: 500 V

Technical parameters/Continuous drain current (Ids): 15.0 A

Technical parameters/rise time: 100 ns

Technical parameters/Input capacitance (Ciss): 2055pF @25V(Vds)

Technical parameters/rated power (Max): 218 W

Technical parameters/descent time: 100 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 218W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3-3

External dimensions/length: 15.8 mm

External dimensions/width: 5 mm

External dimensions/height: 20.1 mm

External dimensions/packaging: TO-3-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQA13N50CF_F109 FQA13N50CF_F109 ON Semiconductor 类似代替 TO-3-3
500V N沟道MOSFET 500V N-Channel MOSFET
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