Technical parameters/dissipated power: 218W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Input capacitance (Ciss): 2055pF @25V(Vds)
Technical parameters/dissipated power (Max): 218W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA13N50CF
|
Fairchild | 类似代替 | TO-3-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQA13N50CF, 15 A, Vds=500 V, 3引脚 TO-3PN封装
|
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