Technical parameters/power supply voltage (DC): 3.00 V
Technical parameters/working voltage: 2.7V ~ 3.6V
Technical parameters/rated current: 10.0 mA
Technical parameters/clock frequency: 20 MHz
Technical parameters/access time: 10.0 ms
Technical parameters/memory capacity: 32000 B
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FM25W256-G
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Ramtron | 功能相似 | SOIC |
F-RAM，Cypress Semiconductor ### FRAM（铁电 RAM） FRAM（铁电随机存取存储器）是非易失存储器，将铁电膜用作电容器来储存数据。 F-RAM 有 ROM 和 RAM 设备的特点，具备高速存取、写入模式的高耐受性、低功耗、非易失和出色的防篡改功能。 因此，这款存储器特别适用于需要高安全性和低消耗的智能卡，以及移动电话和其他设备。
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