Technical parameters/power supply voltage (DC): | 2.70V (min) |
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Technical parameters/memory capacity: | 32000 B |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 2.7 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC |
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Dimensions/Packaging: | SOIC |
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Other/Product Lifecycle: | End of Life |
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Other/Packaging Methods: | Each |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2014/06/16 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FM25L256B-G
|
Cypress Semiconductor | 类似代替 | SOIC-8 |
NVRAM FRAM Serial-SPI 256Kbit 3.3V 8Pin SOIC
|
||
FM25L256B-G
|
Ramtron | 类似代替 | SOIC |
NVRAM FRAM Serial-SPI 256Kbit 3.3V 8Pin SOIC
|
||
FM25W256-G
|
Ramtron | 类似代替 | SOIC |
F-RAM，Cypress Semiconductor ### FRAM（铁电 RAM） FRAM（铁电随机存取存储器）是非易失存储器，将铁电膜用作电容器来储存数据。 F-RAM 有 ROM 和 RAM 设备的特点，具备高速存取、写入模式的高耐受性、低功耗、非易失和出色的防篡改功能。 因此，这款存储器特别适用于需要高安全性和低消耗的智能卡，以及移动电话和其他设备。
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