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Model BF1211WR
Description NN-channel dual gate MOS FETs for channel dual gate MOSFETs
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Brand: NXP
Packaging SOT-343-4
Delivery time
Packaging method Cut Tape (CT), Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1015) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 6.00 V

Technical parameters/rated current: 30.0 mA

Technical parameters/dissipated power: 180 mW

Technical parameters/drain source voltage (Vds): 6.00 V

Technical parameters/Continuous drain current (Ids): 30.0 mA

Technical parameters/rise time: 25 ns

Technical parameters/descent time: 55 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-343-4

External dimensions/packaging: SOT-343-4

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Cut Tape (CT), Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BF1211R BF1211R NXP 功能相似 SC-61B
N沟道双栅极的MOS- FET的 N-channel dual-gate MOS-FETs
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