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Model BF1211R
Description NN-channel dual gate MOS FETs for channel dual gate MOSFETs
Product QR code
Brand: NXP
Packaging SC-61B
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4671) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 6.00 V

Technical parameters/rated current: 30.0 mA

Technical parameters/dissipated power: 180 mW

Technical parameters/drain source voltage (Vds): 6.00 V

Technical parameters/leakage source breakdown voltage: 6 V

Technical parameters/Continuous drain current (Ids): 30.0 mA

Technical parameters/rise time: 15 ns

Technical parameters/descent time: 27 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 65 ℃

Technical parameters/dissipated power (Max): 180 mW

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SC-61B

External dimensions/length: 3 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1 mm

External dimensions/packaging: SC-61B

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BF1211 BF1211 NXP 完全替代 SOT-143
N沟道双栅极的MOS- FET的 N-channel dual-gate MOS-FETs
PDF
BF1211R,215 BF1211R,215 Philips 功能相似 SOT-143
Trans RF MOSFET N-CH 6V 0.03A 4Pin(3+Tab) SOT-143R T/R

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