logo
BOM RFQ Login Register
English
Home Page   Discrete Device   transistor   MOSpipe   HUF76609D3S
Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Model HUF76609D3S
Description 10A ， 100V ， 0.165 OhmN-channel, Logic Level UltraFET Power MOSFET 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0.9  yuan 0.9yuan
10+:
$ 1.2110
50+:
$ 1.1482
100+:
$ 1.1033
300+:
$ 1.0764
500+:
$ 1.0495
1000+:
$ 1.0226
2500+:
$ 0.9822
5000+:
$ 0.9732
Quantity
10+
50+
100+
300+
500+
Price
$1.2110
$1.1482
$1.1033
$1.0764
$1.0495
Price $ 1.2110 $ 1.1482 $ 1.1033 $ 1.0764 $ 1.0495
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4065) Minimum order quantity(10)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/rated voltage (DC): 100 V

Technical parameters/rated current: 10.0 A

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 130 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 49 W

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/breakdown voltage of gate source: ±16.0 V

Technical parameters/Continuous drain current (Ids): 10.0 A

Technical parameters/rise time: 41 ns

Technical parameters/Input capacitance (Ciss): 425pF @25V(Vds)

Technical parameters/rated power (Max): 49 W

Technical parameters/descent time: 28 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 49W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Most helpful | Latest
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Product inquiry

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF76609D3S HUF76609D3S ON Semiconductor 功能相似 TO-252-3
10A ， 100V ， 0.165 Ohm的N通道，逻辑电平UltraFET功率MOSFET 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
PDF
HUF76609D3S HUF76609D3S Intersil 功能相似
10A ， 100V ， 0.165 Ohm的N通道，逻辑电平UltraFET功率MOSFET 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
PDF
HUF76609D3S HUF76609D3S Fairchild 功能相似 TO-252-3
10A ， 100V ， 0.165 Ohm的N通道，逻辑电平UltraFET功率MOSFET 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
PDF
HUF76609D3ST HUF76609D3ST Intersil 类似代替
HUF76609D3S: N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，10A，165mΩ
PDF
HUF76609D3ST HUF76609D3ST Fairchild 类似代替 TO-252-3
HUF76609D3S: N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，10A，165mΩ
PDF

Newly listed products

Product service

PLATFORM

CONTACT US

  • ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
  • Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
  • Tel: +86-0755-82866643

CONTACT INFORMATION

  • WhatsApp：+8615820418003
  • Facebook Messenger：Emily He
  • WeChat：15820418003
  • Telegram：+8613641420552
  • Microsoft Teams：newkasion1
  • E-mail：sales@icgoodfind.com
  • Technical Cooperation：Ericguo@icgoodfind.com
Product Index：
Brand Index：
Friendship link : Chinese Electronic Component Distributor | STM | broadcom | Altera | ISSI | onsemi | nexperia | NXP | Microchip | diodes | lattice | Electronic Component Distributor | Analog Devices | XILINX | Texas Instruments | Infineon | TiToK | YouTube | X | Linkedln | Facebook | VK |

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear