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Model HUF76609D3S
Description MOSFET N-CH 100V 10A DPAK
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Rail
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4009) Minimum order quantity(1)
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Technical parameters/dissipated power: 49W (Tc)

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/rise time: 41 ns

Technical parameters/Input capacitance (Ciss): 425pF @25V(Vds)

Technical parameters/descent time: 28 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 49W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF76609D3S HUF76609D3S ON Semiconductor 功能相似 TO-252-3
10A ， 100V ， 0.165 Ohm的N通道，逻辑电平UltraFET功率MOSFET 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
PDF
HUF76609D3S HUF76609D3S Intersil 功能相似
10A ， 100V ， 0.165 Ohm的N通道，逻辑电平UltraFET功率MOSFET 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
PDF
HUF76609D3S HUF76609D3S Fairchild 功能相似 TO-252-3
10A ， 100V ， 0.165 Ohm的N通道，逻辑电平UltraFET功率MOSFET 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
PDF
HUF76609D3ST HUF76609D3ST Intersil 类似代替
HUF76609D3S: N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，10A，165mΩ
PDF
HUF76609D3ST HUF76609D3ST Fairchild 类似代替 TO-252-3
HUF76609D3S: N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，10A，165mΩ
PDF

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