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Model HUF76407D3S
Description MOSFET N-CH 60V 12A DPAK
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Brand: ON Semiconductor
Packaging TO-252-3
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5080) Minimum order quantity(1)
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Technical parameters/dissipated power: 38W (Tc)

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)

Technical parameters/dissipated power (Max): 38W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF76407D3S HUF76407D3S ON Semiconductor 类似代替 TO-252-3
11A ， 60V ， 0.107 Ohm的N通道，逻辑电平UltraFET功率MOSFET 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
PDF
HUF76407D3ST HUF76407D3ST ON Semiconductor 类似代替 TO-252-3
HUF76407D3S 系列60 V 0.092 Ohm N沟道 逻辑 UltraFET 功率 Mosfet-TO-252AA
PDF

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