Technical parameters/dissipated power: 38 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/rated power (Max): 38 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 38000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF76407D3S
|
ON Semiconductor | 功能相似 | TO-252-3 |
11A , 60V , 0.107 Ohm的N通道,逻辑电平UltraFET功率MOSFET 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
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