Technical parameters/dissipated power: 85W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 1060pF @25V(Vds)
Technical parameters/dissipated power (Max): 85W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD5690
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Fairchild | 功能相似 | TO-252-3 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDD5690, 30 A, Vds=60 V, 3引脚 DPAK (TO-252)封装
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|
Rochester | 功能相似 | TO-252 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDD5690, 30 A, Vds=60 V, 3引脚 DPAK (TO-252)封装
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