Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 19.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 70 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 55 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 19.0 A
Technical parameters/rise time: 39 ns
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/rated power (Max): 55 W
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 55W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.3 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR024NTRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR024NTRPBF 晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 4 V
|
||
IRFZ24N
|
Infineon | 功能相似 | TO-220 |
N沟道 55V 17A
|
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