Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 75A
Encapsulation parameters/Encapsulation: D2PAK
External dimensions/packaging: D2PAK
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75345S3S
|
Intersil | 功能相似 |
75A , 55V , 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
|
|||
HUF75345S3S
|
ON Semiconductor | 功能相似 | TO-263-3 |
75A , 55V , 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
|
||
HUF75345S3S
|
Fairchild | 功能相似 | TO-263-3 |
75A , 55V , 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
|
||
|
|
Rochester | 功能相似 | D2PAK |
75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
||
HUF75345S3ST
|
Intersil | 功能相似 |
75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
|||
HUF75345S3ST
|
Fairchild | 功能相似 | TO-263-3 |
75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review