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Model HUF75345S3S
Description MOSFET N-CH 55V 75A D2PAK
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Brand: ON Semiconductor
Packaging TO-263-3
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2947) Minimum order quantity(1)
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Technical parameters/dissipated power: 325W (Tc)

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/Input capacitance (Ciss): 4000pF @25V(Vds)

Technical parameters/dissipated power (Max): 325W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF75345S3S HUF75345S3S Intersil 类似代替
75A ， 55V ， 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
PDF
HUF75345S3S HUF75345S3S ON Semiconductor 类似代替 TO-263-3
75A ， 55V ， 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
PDF
HUF75345S3S HUF75345S3S Fairchild 类似代替 TO-263-3
75A ， 55V ， 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
PDF
HUF75345S3ST HUF75345S3ST Rochester 类似代替 D2PAK
HUF75345S3S 系列 55 V 0.007 Ohm N 沟道 UltraFET 功率 Mosfet - TO-263AB
PDF
HUF75345S3ST HUF75345S3ST Intersil 类似代替
HUF75345S3S 系列 55 V 0.007 Ohm N 沟道 UltraFET 功率 Mosfet - TO-263AB
PDF
HUF75345S3ST HUF75345S3ST Fairchild 类似代替 TO-263-3
HUF75345S3S 系列 55 V 0.007 Ohm N 沟道 UltraFET 功率 Mosfet - TO-263AB
PDF
HUF75345S3ST_NL HUF75345S3ST_NL Fairchild 功能相似 D2PAK
N沟道 55V 75A

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