Technical parameters/dissipated power: 145W (Tc)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/rise time: 90 ns
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 145W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Intersil | 功能相似 |
60A , 55V , 0.019 Ohm的N通道UltraFET功率MOSFET 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
|
|||
HUF75332S3ST
|
Fairchild | 功能相似 | TO-263-3 |
MOSFET N-CH 55V 60A D2PAK
|
||
HUF75332S3ST
|
Freescale | 功能相似 |
MOSFET N-CH 55V 60A D2PAK
|
|||
HUF75332S3ST
|
ON Semiconductor | 功能相似 | TO-263-3 |
MOSFET N-CH 55V 60A D2PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review