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Description N沟道UltraFET功率MOSFET N-Channel UltraFET Power MOSFET
Product QR code
Packaging TO-263-3
Delivery time
Packaging method Tape
Standard packaging quantity 1
1.79  yuan 1.79yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(3548) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

55.0 V

 

Technical parameters/rated current:

60.0 A

 

Technical parameters/drain source resistance:

22.0 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

145 W

 

Technical parameters/drain source voltage (Vds):

55 V

 

Technical parameters/Leakage source breakdown voltage:

55.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

60.0 A

 

Technical parameters/rise time:

90 ns

 

Technical parameters/Input capacitance (Ciss):

1300pF @25V(Vds)

 

Technical parameters/rated power (Max):

145 W

 

Technical parameters/descent time:

45 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

145W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10.67 mm

 

Dimensions/Width:

9.65 mm

 

Dimensions/Height:

4.83 mm

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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