Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 21.0 A
Technical parameters/drain source resistance: 3.40 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3W (Ta)
Technical parameters/input capacitance: 3.23 nF
Technical parameters/gate charge: 57.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 21.0 A
Technical parameters/rise time: 21.0 ns
Technical parameters/Input capacitance (Ciss): 3230pF @15V(Vds)
Technical parameters/rated power (Max): 1.7 W
Technical parameters/dissipated power (Max): 3W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSC080N03LSGATMA1
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Infineon | 功能相似 | PG-TDSON-8 |
INFINEON BSC080N03LSGATMA1 晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
|
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|
Rochester | 类似代替 | SON |
N沟道PowerTrench㈢ SyncFET TM N-Channel PowerTrench㈢ SyncFET TM
|
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