Technical parameters/frequency: 150 MHz
Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 500 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/thermal resistance: 83.3℃/W (RθJC)
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 150
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS8099
|
ON Semiconductor | 完全替代 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
||
MPS8099
|
Allegro MicroSystems | 完全替代 |
放大器晶体管 Amplifier Transistors
|
|||
MPS8099RLRMG
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管电压和电流是负的PNP晶体管 Amplifier Transistors Voltage and Current are Negative for PNP Transistors
|
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