Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 500 mA
Technical parameters/dissipated power: 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS8099G
|
ON Semiconductor | 完全替代 | TO-92-3 |
ON SEMICONDUCTOR MPS8099G 放大器晶体管
|
||
MPS8099RLRMG
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管电压和电流是负的PNP晶体管 Amplifier Transistors Voltage and Current are Negative for PNP Transistors
|
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