Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 4
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 700 mW
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 4.1A
Technical parameters/minimum current amplification factor (hFE): 100 @2A, 2V
Technical parameters/Maximum current amplification factor (hFE): 200 @0.5A, 2V
Technical parameters/rated power (Max): 2 W
Technical parameters/DC current gain (hFE): 300
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Automotive, Industrial, Motor Drive & Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT953
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Vishay Semiconductor | 功能相似 | SOT-223 |
DIODES INC. FZT953 单晶体管 双极, PNP, 100 V, 125 MHz, 3 W, -5 A, 200 hFE
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FZT953
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Zetex | 功能相似 | SOT-223 |
DIODES INC. FZT953 单晶体管 双极, PNP, 100 V, 125 MHz, 3 W, -5 A, 200 hFE
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PBSS306PZ
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Nexperia | 功能相似 | SOT-223 |
低饱和电压 PNP 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia
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||
PBSS306PZ,135
|
Nexperia | 功能相似 | TO-261-4 |
单晶体管 双极, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE
|
||
PBSS306PZ,135
|
NXP | 功能相似 | TO-261-4 |
单晶体管 双极, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE
|
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