Technical parameters/polarity: | PNP, P-Channel |
|
Technical parameters/dissipated power: | 3 W |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 5A |
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Technical parameters/DC current gain (hFE): | 200 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | Automotive, Military, Defense, Automotive, Military and Aerospace, Aerospace, Defence |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standards/military grade: | Yes |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS306PZ,135
|
Nexperia | 功能相似 | TO-261-4 |
NXP PBSS306PZ,135 单晶体管 双极, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE
|
||
PBSS306PZ,135
|
NXP | 功能相似 | TO-261-4 |
NXP PBSS306PZ,135 单晶体管 双极, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE
|
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