Technical parameters/power supply voltage (DC): 5.00V (max)
Technical parameters/rated power: 0.3 W
Technical parameters/power supply current: 1.1 mA
Technical parameters/dissipated power: 300 mW
Technical parameters/testing frequency: 2.5 GHz
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 300 mW
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5 VDC
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: VFQFN-16
External dimensions/length: 3.1 mm
External dimensions/width: 3.1 mm
External dimensions/height: 0.95 mm
External dimensions/packaging: VFQFN-16
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: RF Communications, Test & Measurement, Signal Processing
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HMC348LP3E
|
ADI | 完全替代 | VFQFN-16 |
Analog Devices Hittite Analog Devices Hittite 具有一系列射频开关电路。 这些电路具有低损耗宽带、正向控制传输开关、宽带无反射 GaAs MESFET SP4T 开关和无反射 SP3T 开关。 ### 开关和多路复用器,Analog Devices
|
||
HMC348LP3E
|
ADI | 完全替代 | VFQFN-16 |
Analog Devices Hittite Analog Devices Hittite 具有一系列射频开关电路。 这些电路具有低损耗宽带、正向控制传输开关、宽带无反射 GaAs MESFET SP4T 开关和无反射 SP3T 开关。 ### 开关和多路复用器,Analog Devices
|
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