Technical parameters/power supply voltage (DC): | 5.00V (max) |
|
Technical parameters/rated power: | 0.3 W |
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Technical parameters/power supply current: | 1.1 mA |
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Technical parameters/dissipated power: | 300 mW |
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Technical parameters/testing frequency: | 2.5 GHz |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5 VDC |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 16 |
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Encapsulation parameters/Encapsulation: | VFQFN-16 |
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Dimensions/Length: | 3.1 mm |
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Dimensions/Width: | 3.1 mm |
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Dimensions/Height: | 0.95 mm |
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Dimensions/Packaging: | VFQFN-16 |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | End of Life |
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Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | RF Communications, Test & Measurement, Signal Processing |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HMC348LP3E
|
ADI | 完全替代 | VFQFN-16 |
Analog Devices Hittite Analog Devices Hittite 具有一系列射频开关电路。 这些电路具有低损耗宽带、正向控制传输开关、宽带无反射 GaAs MESFET SP4T 开关和无反射 SP3T 开关。 ### 开关和多路复用器，Analog Devices
|
||
HMC348LP3E
|
ADI | 完全替代 | VFQFN-16 |
Analog Devices Hittite Analog Devices Hittite 具有一系列射频开关电路。 这些电路具有低损耗宽带、正向控制传输开关、宽带无反射 GaAs MESFET SP4T 开关和无反射 SP3T 开关。 ### 开关和多路复用器，Analog Devices
|
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