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Model IRF1010ZSPBF
Description INFINEON IRF1010ZSPBF Transistor, MOSFET, N-channel, 94 A, 55 V, 7.5 Mohm, 10 V, 4 V
Product QR code
Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
1.47  yuan 1.47yuan
5+:
$ 1.9791
25+:
$ 1.8325
50+:
$ 1.7299
100+:
$ 1.6859
500+:
$ 1.6566
2500+:
$ 1.6199
5000+:
$ 1.6053
10000+:
$ 1.5833
Quantity
5+
25+
50+
100+
500+
Price
$1.9791
$1.8325
$1.7299
$1.6859
$1.6566
Price $ 1.9791 $ 1.8325 $ 1.7299 $ 1.6859 $ 1.6566
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5497) Minimum order quantity(5)
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Technical parameters/rated power: 140 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.0075 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 140 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/Continuous drain current (Ids): 94A

Technical parameters/Input capacitance (Ciss): 2840pF @25V(Vds)

Technical parameters/rated power (Max): 140 W

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 140W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
AUIRF1010ZS AUIRF1010ZS Infineon 类似代替 TO-263-3
INFINEON AUIRF1010ZS 晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V
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HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
PDF
IRF1010ZSTRLPBF IRF1010ZSTRLPBF International Rectifier 类似代替 TO-263-3
HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
PDF
IRF1010ZSTRRPBF IRF1010ZSTRRPBF International Rectifier 类似代替 TO-252-3
D2PAK N-CH 55V 94A
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