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Model IRF1010ZSTRLPBF
Description HEXFET® N Channel power MOSFET exceeds 55A, Infineon # # MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust single and dual N-channel and P-channel device combination provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
6.23  yuan 6.23yuan
10+:
$ 7.4724
100+:
$ 7.0988
500+:
$ 6.8497
1000+:
$ 6.8372
2000+:
$ 6.7874
5000+:
$ 6.7252
7500+:
$ 6.6753
10000+:
$ 6.6504
Quantity
10+
100+
500+
1000+
2000+
Price
$7.4724
$7.0988
$6.8497
$6.8372
$6.7874
Price $ 7.4724 $ 7.0988 $ 6.8497 $ 6.8372 $ 6.7874
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8486) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.0058 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 140 W

Technical parameters/threshold voltage: 4 V

Technical parameters/input capacitance: 2840 pF

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/Continuous drain current (Ids): 94A

Technical parameters/rise time: 150 ns

Technical parameters/Input capacitance (Ciss): 2840pF @25V(Vds)

Technical parameters/rated power (Max): 140 W

Technical parameters/descent time: 92 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 140W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 11.3 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF1010ZSPBF IRF1010ZSPBF Infineon 类似代替 TO-263-3
INFINEON IRF1010ZSPBF 晶体管, MOSFET, N沟道, 94 A, 55 V, 7.5 mohm, 10 V, 4 V
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IRF1010ZSTRRPBF IRF1010ZSTRRPBF International Rectifier 类似代替 TO-252-3
D2PAK N-CH 55V 94A
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STB140NF75T4 STB140NF75T4 ST Microelectronics 功能相似 TO-263-3
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STB60NF06LT4 STB60NF06LT4 ST Microelectronics 功能相似 TO-263-3
STMICROELECTRONICS STB60NF06LT4 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V

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