Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/dissipated power: 2 W
Technical parameters/gain bandwidth product: 240 MHz
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/minimum current amplification factor (hFE): 100 @1A, 2V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.65 mm
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT649
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FZT649 单晶体管 双极, NPN, 25 V, 150 MHz, 2 W, 3 A, 15 hFE
|
||
FZT649
|
Diodes | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR FZT649 单晶体管 双极, NPN, 25 V, 150 MHz, 2 W, 3 A, 15 hFE
|
||
FZT649
|
Kexin | 功能相似 |
FAIRCHILD SEMICONDUCTOR FZT649 单晶体管 双极, NPN, 25 V, 150 MHz, 2 W, 3 A, 15 hFE
|
|||
FZT649TA
|
Diodes | 类似代替 | TO-261-4 |
FZT649TA 编带
|
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