Technical parameters/frequency: | 240 MHz |
|
Technical parameters/rated voltage (DC): | 25.0 V |
|
Technical parameters/rated current: | 3.00 A |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 3 W |
|
Technical parameters/breakdown voltage (collector emitter): | 25 V |
|
Technical parameters/Maximum allowable collector current: | 3A |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @1A, 2V |
|
Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 3000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Packaging: | TO-261-4 |
|
Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FZT649
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FZT649 单晶体管 双极, NPN, 25 V, 150 MHz, 2 W, 3 A, 15 hFE
|
||
FZT649
|
Diodes | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR FZT649 单晶体管 双极, NPN, 25 V, 150 MHz, 2 W, 3 A, 15 hFE
|
||
FZT649
|
Kexin | 功能相似 |
FAIRCHILD SEMICONDUCTOR FZT649 单晶体管 双极, NPN, 25 V, 150 MHz, 2 W, 3 A, 15 hFE
|
|||
FZT649TC
|
Diodes | 类似代替 | TO-261-4 |
三极管(BJT) FZT649TC SOT-223-3
|
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