Technical parameters/frequency: 100 MHz
Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 2000 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 6A
Technical parameters/minimum current amplification factor (hFE): 120 @1A, 2V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.57 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSS60600MZ4T1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
ON SEMICONDUCTOR NSS60600MZ4T1G 单晶体管 双极, PNP, -60 V, 100 MHz, 2 W, -6 A, 150 hFE
|
||
NSV60600MZ4T1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
PNP 晶体管，超过 1A，On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
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