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Specification parameters
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Technical parameters/frequency:

100 MHz

Technical parameters/halogen-free state:

Halogen Free

Technical parameters/number of pins:

Technical parameters/polarity:

PNP

Technical parameters/dissipated power:

2 W

Technical parameters/breakdown voltage (collector emitter):

60 V

Technical parameters/Maximum allowable collector current:

Technical parameters/minimum current amplification factor (hFE):

120 @1A, 2V

Technical parameters/rated power (Max):

800 mW

Technical parameters/DC current gain (hFE):

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

2000 mW

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-261-4

Dimensions/Length:

6.7 mm

Dimensions/Width:

3.7 mm

Dimensions/Height:

1.65 mm

Dimensions/Packaging:

TO-261-4

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Other/Manufacturing Applications:

Industrial, computer and computer peripherals, motor drive and control, power management, power management, automotive, portable equipment, Industrial, Automotive, Portable Devices, Motor Drive & Control, Computers & Computer Peripherals

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with the REACH SVHC standard:

No SVHC

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
NSS60600MZ4T3G	ON Semiconductor	类似代替	TO-261-4	60 V ， 6.0 A，低VCE （ sat）的PNP晶体管 60 V, 6.0 A, Low VCE(sat) PNP Transistor	PDF
NSV60600MZ4T1G	ON Semiconductor	类似代替	TO-261-4	PNP 晶体管，超过 1A，On Semiconductor ### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管功率晶体管双晶体管复合晶体管对高电压晶体管射频晶体管双极/FET 晶体管	PDF
NSV60600MZ4T3G	ON Semiconductor	类似代替	TO-261-4	60 V ， 6.0 A，低VCE （ sat）的PNP晶体管 60 V, 6.0 A, Low VCE(sat) PNP Transistor	PDF

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CONTACT US

ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643