Technical parameters/forward voltage: 1.05 V
Technical parameters/reverse recovery time: 60 ns
Technical parameters/forward current: 20 A
Technical parameters/Maximum forward surge current (Ifsm): 120 A
Technical parameters/forward voltage (Max): 1.35 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/working junction temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
344
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Littelfuse | 功能相似 |
Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon
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344
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Visual Communications Company | 功能相似 |
Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon
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344
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Harwin | 功能相似 |
Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon
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344
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Mennekes | 功能相似 |
Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon
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Philips | 类似代替 | 3 |
NXP BYV32E-200 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 25 ns, 125 A
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Philips | 类似代替 |
NXP BYV32E-200 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 25 ns, 125 A
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|||
BYV32E-200
|
We En Semiconductor | 类似代替 | TO-220 |
NXP BYV32E-200 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 25 ns, 125 A
|
||
BYV32E-200
|
Microsemi | 类似代替 |
NXP BYV32E-200 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 25 ns, 125 A
|
|||
BYV34-400
|
NXP | 功能相似 | TO-220 |
NXP BYV34-400 快速/超快二极管, 双共阴极, 400 V, 20 A, 1.35 V, 60 ns, 120 A
|
||
BYV34-400
|
Philips | 功能相似 | TO-220 |
NXP BYV34-400 快速/超快二极管, 双共阴极, 400 V, 20 A, 1.35 V, 60 ns, 120 A
|
||
MUR1640CTG
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR MUR1640CTG 快速/超快二极管, 双共阴极, 400 V, 16 A, 1.3 V, 60 ns, 100 A
|
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