Technical parameters/reverse recovery time: 25 ns
Technical parameters/forward current: 10 A
Technical parameters/Maximum forward surge current (Ifsm): 137 A
Technical parameters/forward voltage (Max): 1.15 V
Technical parameters/forward current (Max): 20 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.3 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Video and visual, power management, imaging
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 | 3 |
NXP BYV32E-200 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 25 ns, 125 A
|
||
|
|
Philips | 功能相似 |
NXP BYV32E-200 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 25 ns, 125 A
|
|||
BYV32E-200
|
We En Semiconductor | 功能相似 | TO-220 |
NXP BYV32E-200 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 25 ns, 125 A
|
||
BYV32E-200
|
Microsemi | 功能相似 |
NXP BYV32E-200 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 25 ns, 125 A
|
|||
BYV32E-200,127
|
We En Semiconductor | 功能相似 | TO-220-3 |
BYV32E-200 系列 200 V 20 A 双 耐用 超快速 整流器 二极管 - TO-220AB
|
||
BYV34-400
|
NXP | 类似代替 | TO-220 |
整流器二极管，WeEn Semiconductors ### 二极管和整流器，NXP Semiconductors NXP 以不同封装和配置提供广泛的开关二极管。
|
||
BYV34-400
|
Philips | 类似代替 | TO-220 |
整流器二极管，WeEn Semiconductors ### 二极管和整流器，NXP Semiconductors NXP 以不同封装和配置提供广泛的开关二极管。
|
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