Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.185 Ω
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 420pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.6 mm
External dimensions/width: 2.3 mm
External dimensions/height: 6.1 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Lighting, motor drive and control, power management, audio
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
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|---|---|---|---|---|---|---|
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ON Semiconductor | 功能相似 | TO-251-3 |
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Freescale | 类似代替 | IPAK-3 |
ON Semiconductor Si P沟道 MOSFET FQU17P06TU, 12 A, Vds=60 V, 3引脚 IPAK (TO-251)封装
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STD10PF06-1
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ST Microelectronics | 功能相似 | TO-251-3 |
P沟道60V - 0.18欧姆 - 10A IPAK / DPAK的STripFET II功率MOSFET P-CHANNEL 60V - 0.18 Ohm - 10A IPAK/DPAK STripFET II POWER MOSFET
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