Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -10.0 A
Technical parameters/drain source resistance: 180 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 40 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/rise time: 40 ns
Technical parameters/Input capacitance (Ciss): 850pF @25V(Vds)
Technical parameters/rated power (Max): 40 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 40W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQU11P06TU
|
Fairchild | 功能相似 | TO-251-3 |
FAIRCHILD SEMICONDUCTOR FQU11P06TU 晶体管, P沟道
|
||
FQU11P06TU
|
ON Semiconductor | 功能相似 | TO-251-3 |
FAIRCHILD SEMICONDUCTOR FQU11P06TU 晶体管, P沟道
|
||
FQU17P06TU
|
Freescale | 功能相似 | IPAK-3 |
FAIRCHILD SEMICONDUCTOR FQU17P06TU 晶体管, MOSFET, P沟道, 12 A, -60 V, 0.11 ohm, -10 V, -4 V
|
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