Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 44W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 9A
Technical parameters/Input capacitance (Ciss): 1030pF @25V(Vds)
Technical parameters/dissipated power (Max): 44W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220F-3
External dimensions/packaging: TO-220F-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube, Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
R5009FNX
|
ROHM Semiconductor | 功能相似 | TO-220-3 |
10V驱动N沟道MOSFET 10V Drive Nch MOSFET
|
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