Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.65 Ω
Technical parameters/polarity: N
Technical parameters/dissipated power: 50W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 9A
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 630pF @25V(Vds)
Technical parameters/descent time: 40 ns
Technical parameters/dissipated power (Max): 50W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF9N50CYDTU
|
Fairchild | 功能相似 | TO-220F-3 |
MOSFET N-CH 500V 9A TO-220F
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review