Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 120 mA
Technical parameters/drain source resistance: 30.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 0.5 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 120 mA
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BS107PSTZ
|
Diodes | 类似代替 | E-Line-3 |
场效应管(MOSFET) BS107PSTZ EP3SC
|
||
BS107PSTZ
|
Zetex | 类似代替 |
场效应管(MOSFET) BS107PSTZ EP3SC
|
|||
BSS123-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
|
||
ZVP2106A
|
Zetex | 类似代替 | TO-92-3 |
DIODES INC. ZVP2106A 晶体管, MOSFET, P沟道, -280 mA, -60 V, 4 ohm, -10 V, -3.5 V
|
||
ZVP2106A
|
Diodes Zetex | 类似代替 | TO-92-3 |
DIODES INC. ZVP2106A 晶体管, MOSFET, P沟道, -280 mA, -60 V, 4 ohm, -10 V, -3.5 V
|
||
ZVP2106A
|
Diodes | 类似代替 | TO-92-3 |
DIODES INC. ZVP2106A 晶体管, MOSFET, P沟道, -280 mA, -60 V, 4 ohm, -10 V, -3.5 V
|
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