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Model BS107PSTZ

Description 场效应管(MOSFET) BS107PSTZ EP3SC

Brand: Diodes

Packaging E-Line-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	200 V
Technical parameters/rated current:	120 mA
Technical parameters/drain source resistance:	30.0 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	0.5 W
Technical parameters/drain source voltage (Vds):	200 V
Technical parameters/Leakage source breakdown voltage:	200 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	120 mA
Technical parameters/rise time:	8 ns
Technical parameters/descent time:	8 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	500mW (Ta)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	E-Line-3
Dimensions/Packaging:	E-Line-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Customs information/ECCN code:	EAR99

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