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Model FQP85N06
Description QFET® N Channel MOSFET, over 31A, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
7.29  yuan 7.29yuan
10+:
$ 8.7504
100+:
$ 8.3129
500+:
$ 8.0212
1000+:
$ 8.0066
2000+:
$ 7.9483
5000+:
$ 7.8754
7500+:
$ 7.8170
10000+:
$ 7.7879
Quantity
10+
100+
500+
1000+
2000+
Price
$8.7504
$8.3129
$8.0212
$8.0066
$7.9483
Price $ 8.7504 $ 8.3129 $ 8.0212 $ 8.0066 $ 7.9483
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1333) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 85.0 A

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.01 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 160 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/leakage source breakdown voltage: 60.0 V

Technical parameters/breakdown voltage of gate source: ±25.0 V

Technical parameters/Continuous drain current (Ids): 85.0 A

Technical parameters/rise time: 230 ns

Technical parameters/Input capacitance (Ciss): 4120pF @25V(Vds)

Technical parameters/rated power (Max): 160 W

Technical parameters/descent time: 170 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 160W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.1 mm

External dimensions/width: 4.7 mm

External dimensions/height: 9.4 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP60NF06 STP60NF06 ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP60NF06 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 10 V, 2 V
PDF
STP65NF06 STP65NF06 ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP65NF06 晶体管, MOSFET, N沟道, 30 A, 60 V, 11.5 mohm, 10 V, 4 V
PDF

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