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Model FQP9N90C
Description QFET® N Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
11.08  yuan 11.08yuan
5+:
$ 12.9683
50+:
$ 12.4141
200+:
$ 12.1037
500+:
$ 12.0261
1000+:
$ 11.9486
2500+:
$ 11.8599
5000+:
$ 11.8045
7500+:
$ 11.7490
Quantity
5+
50+
200+
500+
1000+
Price
$12.9683
$12.4141
$12.1037
$12.0261
$11.9486
Price $ 12.9683 $ 12.4141 $ 12.1037 $ 12.0261 $ 11.9486
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1423) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 900 V

Technical parameters/rated current: 8.00 A

Technical parameters/number of channels: 1

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 1.12 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 205 W

Technical parameters/threshold voltage: 5 V

Technical parameters/drain source voltage (Vds): 900 V

Technical parameters/leakage source breakdown voltage: 900 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 8.00 A

Technical parameters/rise time: 120 ns

Technical parameters/Input capacitance (Ciss): 2730pF @25V(Vds)

Technical parameters/rated power (Max): 205 W

Technical parameters/descent time: 75 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 205000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.1 mm

External dimensions/width: 4.7 mm

External dimensions/height: 9.4 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STW12NK90Z STW12NK90Z ST Microelectronics 功能相似 TO-247-3
STMICROELECTRONICS STW12NK90Z 功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V
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