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Model FQD2N60CTF
Description MOSFET N-CH 600V 1.9A DPAK
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Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5761) Minimum order quantity(1)
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Technical parameters/dissipated power: 2.5W (Ta), 44W (Tc)

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/rise time: 25 ns

Technical parameters/Input capacitance (Ciss): 235pF @25V(Vds)

Technical parameters/descent time: 28 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta), 44W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQD2N60CTM FQD2N60CTM Fairchild 类似代替 TO-252-3
FAIRCHILD SEMICONDUCTOR FQD2N60CTM 功率场效应管, MOSFET, N沟道, 1.9 A, 600 V, 3.6 ohm, 10 V, 4 V
PDF
STD3NK60ZT4 STD3NK60ZT4 ST Microelectronics 功能相似 TO-252-3
STMICROELECTRONICS STD3NK60ZT4 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
PDF

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