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Model FQD2N60CTM
Description FAIRCHILD SEMICONDUCTOR FQD2N60CTM 功率场效应管, MOSFET, N沟道, 1.9 A, 600 V, 3.6 ohm, 10 V, 4 V
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.26  yuan 7.26yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1847) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

1.90 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

3.6 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

44 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/Input capacitance:

235 pF

 

Technical parameters/gate charge:

12.0 nC

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

1.90 A

 

Technical parameters/rise time:

25 ns

 

Technical parameters/Input capacitance (Ciss):

235pF @25V(Vds)

 

Technical parameters/rated power (Max):

2.5 W

 

Technical parameters/descent time:

28 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2.5W (Ta), 44W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.39 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQD2N60CTF FQD2N60CTF Freescale 类似代替
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FQD2N60CTF FQD2N60CTF Fairchild 类似代替 TO-252-3
N沟道MOSFET QFET® N-Channel QFET® MOSFET
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STMICROELECTRONICS STD3NK60ZT4 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
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