Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 6.20 A
Technical parameters/drain source resistance: 1.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.13W (Ta), 130W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 6.20 A
Technical parameters/Input capacitance (Ciss): 1000pF @25V(Vds)
Technical parameters/rated power (Max): 3.13 W
Technical parameters/dissipated power (Max): 3.13W (Ta), 130W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB4NK60ZT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB4NK60ZT4 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
|
||
STB6NK60ZT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB6NK60ZT4 功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
|
||
STB9NK60ZT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB9NK60ZT4 功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
|
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