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Model STB6NK60ZT4
Description STMICROELECTRONICS STB6NK60ZT4 功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
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Brand: ST Microelectronics
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.59  yuan 2.59yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5813) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

6.00 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

1 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

110 W

 

Technical parameters/threshold voltage:

3.75 V

 

Technical parameters/Input capacitance:

905 pF

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

6.00 A

 

Technical parameters/rise time:

14 ns

 

Technical parameters/Input capacitance (Ciss):

905pF @25V(Vds)

 

Technical parameters/rated power (Max):

110 W

 

Technical parameters/descent time:

19 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

110W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10.75 mm

 

Dimensions/Width:

10.4 mm

 

Dimensions/Height:

4.6 mm

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Not Recommended for New Designs

 

Other/Packaging Methods:

Tape & Reel (TR)

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STB4NK60ZT4 STB4NK60ZT4 ST Microelectronics 类似代替 TO-263-3
STMICROELECTRONICS STB4NK60ZT4 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
PDF
STB9NK60ZT4 STB9NK60ZT4 ST Microelectronics 类似代替 TO-263-3
STMICROELECTRONICS STB9NK60ZT4 功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
PDF

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