Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.12 Ω
Technical parameters/dissipated power: 280 W
Technical parameters/threshold voltage: 5 V
Technical parameters/input capacitance: 2100 pF
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 2100pF @25V(Vds)
Technical parameters/descent time: 75 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 280 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/length: 15.8 mm
External dimensions/width: 5 mm
External dimensions/height: 18.9 mm
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power management, lighting, industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA9N90C_F109
|
ON Semiconductor | 功能相似 | TO-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQA9N90C_F109, 9 A, Vds=900 V, 3引脚 TO-3PN封装
|
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