Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.032 Ω
Technical parameters/dissipated power: 310 W
Technical parameters/threshold voltage: 5 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/rise time: 640 ns
Technical parameters/Input capacitance (Ciss): 6600pF @25V(Vds)
Technical parameters/rated power (Max): 310 W
Technical parameters/descent time: 275 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 310 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 15.8 mm
External dimensions/width: 5 mm
External dimensions/height: 18.9 mm
External dimensions/packaging: TO-3-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, lighting, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD18N55M5
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD18N55M5 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
|
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