Technical parameters/frequency: 165 MHz
Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/rated power: 0.625 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.625 W
Technical parameters/gain bandwidth product: 165 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 200 @1A, 2V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 0.98 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FMMT619
|
Vishay Semiconductor | 功能相似 | SOT-23 |
单晶体管 双极, NPN, 50 V, 140 MHz, 625 mW, 2 A, 450 hFE
|
||
FMMT619
|
CJ | 功能相似 | SOT-23-3 |
单晶体管 双极, NPN, 50 V, 140 MHz, 625 mW, 2 A, 450 hFE
|
||
FMMT619
|
Diodes | 功能相似 | SOT-23 |
单晶体管 双极, NPN, 50 V, 140 MHz, 625 mW, 2 A, 450 hFE
|
||
FSB619
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NPN 晶体管，40V 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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