Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 30 @10mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power management, industrial, automotive applications
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5216T1
|
ON Semiconductor | 功能相似 | SC-70-3 |
MUN5216T1 带阻NPN三极管 50V 100mA/0.1A 4.7k 增益160-350 SOT-323/SC-70 marking/标记 8F
|
||
PDTC143EU,115
|
Nexperia | 类似代替 | SOT-323-3 |
NXP PDTC143EU,115 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-323
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review