Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 202 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 160 @5mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 160
Technical parameters/rated power (Max): 202 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/length: 2.1 mm
External dimensions/width: 1.24 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SC-70-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN5216T1G
|
ON Semiconductor | 类似代替 | SC-70-3 |
NPN硅偏置电阻晶体管 NPN SILICON BIAS RESISTOR TRANSISTORS
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PDTC143EU,115
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Nexperia | 功能相似 | SOT-323-3 |
NXP PDTC143EU,115 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-323
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PDTC143ZU,115
|
NXP | 功能相似 | SOT-323-3 |
NXP PDTC143ZU,115 NPN 数字晶体管, 100 mA, Vce=50 V, 4.7 kΩ, 电阻比:0.1, 3引脚 UMT封装
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PDTC143ZU,115
|
Nexperia | 功能相似 | SOT-323-3 |
NXP PDTC143ZU,115 NPN 数字晶体管, 100 mA, Vce=50 V, 4.7 kΩ, 电阻比:0.1, 3引脚 UMT封装
|
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