Technical parameters/drain source resistance: 22 mΩ
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 1.7 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 550pF @15V(Vds)
Technical parameters/rated power (Max): 900 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6984AS
|
ON Semiconductor | 类似代替 | SOIC-8 |
ON Semiconductor PowerTrench, SyncFET 系列 双 Si N沟道 MOSFET FDS6984AS, 5.5 A，8.5 A, Vds=30 V, 8引脚
|
||
FDS6990A
|
Fairchild | 类似代替 | SOIC-8 |
ON Semiconductor PowerTrench 系列 双 Si N沟道 MOSFET FDS6990A, 7.5 A, Vds=30 V, 8引脚 SOIC封装
|
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