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Model FDN335N_NL
Description MOSFET N-CH 20V
Product QR code
Brand: Fairchild
Packaging SSOT-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9184) Minimum order quantity(1)
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Technical parameters/drain source resistance: 70.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 500 mW

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/leakage source breakdown voltage: 20.0 V

Technical parameters/breakdown voltage of gate source: ±8.00 V

Technical parameters/Continuous drain current (Ids): 1.70 A

Technical parameters/rise time: 8.5 ns

Technical parameters/descent time: 8.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/Encapsulation: SSOT-3

External dimensions/length: 2.9 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1.12 mm

External dimensions/packaging: SSOT-3

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDN335N FDN335N Fairchild 功能相似 SOT-23-3
FAIRCHILD SEMICONDUCTOR FDN335N 晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV
PDF
FDN335N FDN335N ON Semiconductor 功能相似 SOT-23-3
FAIRCHILD SEMICONDUCTOR FDN335N 晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV
PDF

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